Sensor Electronic Technology, Inc.

August 20, 2003	SET awarded AlGaN/GaN transistor patent Sensor Electronic Technology, Inc. has received a patent for its metal oxide semiconductor heterostructure field effect transistor (MOSHFET).
August 7, 2003	II-VI and SET jointly develop AlInGaN/GaN HFETs II-VI Incorporated and Sensor Electronic Technology, Inc. have joined efforts in a push for development of AlInGaN/GaN HFET epitaxial wafer technology for ultra-high power next generation radars, wireless and satellite communications systems.
July 23, 2003	SET demonstrates 4 inch GaN HFET epiwafers Sensor Electronic Technology, Inc. has demonstrated III-nitride based heterostructure FET (HFET) wafers grown on 4 inch (100 mm) diameter sapphire substrates.
April 2003	Sensor Electronic Technology, Inc. demonstrates first AlGaN/GaN Heterostructure Field Effect Transistor devices fabricated using novel single crystal bulk AlN substrates from Crystal IS, Inc., Compound Semiconductor, April 2003, Volume 9, Number 3, p. 14
March 2003	Sensor Electronic Technology, Inc. reports deep ultraviolet emission from structures grown on single crystal bulk AlN substrates.
February 21, 2003	Sensor Electronic Technology, Inc. was awarded five Small Business Innovation Research (SBIR) Phase I contracts by the Missile Defense Agency (MDA) to develop epitaxial wafers technology for manufacturing of high microwave power transistors for new generation radars and wireless communication systems. Two contracts will focus on the modifications to proprietary Metalorganic Chemical Vapor Deposition (MOCVD) reactors being developed by SET, Inc., which will significantly improve the process control for deposition of high quality quaternary AlInGaN-based epitaxial transistor wafers. Three other contracts are joint efforts with II-VI, Inc. (Saxonburg, PA based company) to develop innovative high microwave transistor designs and epitaxial wafer technology using semi-insulating 6H-SiC substrates produced by II-VI, Inc.
November 25, 2002	New record for stimulated emission in AlGaN/AlN Sensor Electronic Technology, Inc. and Crystal IS have observed deep UV stimulated emission in AlGaN/AlN-based quantum well structures at a wavelength of 258 nm.
April 22, 2002	Sensor Electronic Technology, Inc. has been awarded a three-year contract with the U.S. Army/SMDC for the development of materials and devices for high microwave power applications.
August 15, 2002	Sensor Electronic Technology, Inc. has been awarded three-year NASA program on the development of III-Nitride based ultraviolet light sensors. This is a joint development with University of South Carolina and Jet Propulsion Lab, Pasadena, CA.
March 12, 2002	Sensor Electronic Technology, Inc. has been awarded 4 Small Business Innovation Research (SBIR) Phase I programs funded by Ballistic Missile Defense Organization and the Office of Naval Research for the development of III-Nitride based electronic and optoelectronic materials and devices.
January 9, 2002	Sensor Electronic Technology, Inc. has been awarded Small Business Innovation Research (SBIR) Phase II program for the development of its novel AlInGaN-based high microwave power Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors (MOSHFETs) funded by Ballistic Missile Defense Organization. This two-year, $1,300,000 program is focused on the devices for high-power (>20 W), high frequency (up to 10 GHz, X-band) amplifiers for a new generation of radars and future wireless communication systems.
January 3, 2002	Sensor Electronic Technology, Inc. has signed a three-year contract with the U.S. Army Space Missile Defense Command for the development of high power GaN-based transistors and ultraviolet/infrared imaging systems.
March 2000	Sensor Electronic Technology, Inc. is the only “new first-time winning company”, which won 3 SBIR Phase I awards from Ballistic Missile Defense Organization in year 2000. (see www.winbmdo.com, SBIR 2000 Phase I Selections – Statistics)
January 17, 2000	Sensor Electronic Technology, Inc. along with University of South Carolina reported on the successful testing results of the jointly developed blue GaN/InGaN Light Emitting Diodes grown over Silicon substrates (see Applied Physics Letters, v. 76, No 3, page 273 (2000).