News Archives
December 15, 2009
SET, Inc. achieves record deep UV LED performance from large area single chip devices.
September 21, 2009
SET, Inc. received 2-year SBIR Phase II contract from the Army Research Office
SET, Inc. received 2-year SBIR Phase II contract from the Army Research Office to develop large-area, high-power deep UV LEDs with peak emission wavelength in the range of 270 nm – 280 nm. The program will advance current state-of-the-art single chip devices that can deliver CW output optical power exceeding 50 mW. The company has already delivered LEDs with power > 20 mW to the Army for independent testing and evaluation.
September 14, 2009
SET, Inc. awarded US Navy’s Small Business Innovation Research (SBIR) program
SET, Inc. has been awarded a 24-month Phase II contract through the US Navy’s Small Business Innovation Research (SBIR) program to continue its development of III-Nitride based cryogenic electronics for the Navy needs.
June 8, 2009
Sensor Electronic Technology Receives 2009 Best of Columbia Award
SET, Inc. has been selected for the 2009 Best of Columbia Award by the U.S. Commerce Association. read more
April 16, 2009
President and CEO of Sensor Electronic Technology, Inc. Honored with State Science Award of Republic of Lithuania.
January 28, 2009
SPIE and Laurin Publishing name Sensor Electronic Technology, Inc. among Prism Awards winners at SPIE Photonics West 2009.
January 28, 2008
SET, Inc. - A Success Story
SET, Inc. has been named a success story by Defense Advanced Research Projects Agency read more
January 15, 2008
SET, Inc. Receives SCRA Award
SC Launch has awarded SBIR/STTR Phase I Matching Grant Program award to SET, Inc. read more
January 10, 2008
Sensor Electronic Technology, Inc. Introduces High Power Deep UV LED Lamps
Sensor Electronic Technology, Inc. has announced the introduction of a new product line based on deep ultraviolet light emitting diode (DUV LED) technology. The new line includes multi-chip lamps capable to deliver CW optical power in 270-290 nm wavelength range in excess of 50 mW. read more
